2004. 11. 26 1/3 semiconductor technical data KTA1962A triple diffused pnp transistor revision no : 0 power amplifier applications. features high collector voltage : v ceo =-230v(min.) complementary to ktc5242a. recommended for 80w high fidelity audio frequency amplifier output stage. maximum rating (ta=25 ) 1. base 2. collector 3. emitter to-3p(n) c g l k h a d b e f i d p pt m j q 123 a 15.9 max millimeters dim b 4.8 max c 20.0 0.3 d 2.0 0.3 d 1.0+0.3/-0.25 e2.0 f 1.0 g 3.3 max h9.0 i4.5 j 2.0 k 1.8 max l 20.5 0.5 p 5.45 0.2 q 3.2 0.2 t 0.6+0.3/-0.1 2.8 m + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) note : h fe (1) classification r:55 110 , o:80 160 characteristic symbol rating unit collector-base voltage v cbo -230 v collector-emitter voltage v ceo -230 v emitter-base voltage v ebo -5 v collector current i c -15 a base current i b -1.5 a collector power dissipation (tc=25 ) p c 130 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-230v, i e =0 - - -5.0 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -5.0 a collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -230 - - v dc current gain h fe (1) (note) v ce =-5v, i c =-1a 55 - 160 h fe (2) v ce =-5v, i c =-7a 35 60 - collector-emitter saturation voltage v ce(sat) i c =-8a, i b =-0.8a - -1.5 -3.0 v base-emitter voltage v be v ce =-5v, i c =-7a - -1.0 -1.5 v transition frequency f t v ce =-5v, i c =-1a - 30 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 360 - pf
2004. 11. 26 2/3 KTA1962A revision no : 0 collector current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v h - i c collector current i (a) -0.01 -0.03 -0.1 -0.3 fe dc current gain h base-emitter saturation collector current i (a) -0.01 -0.03 -0.1 -0.3 c be(sat) -0.03 v - i collector-emitter saturation collector current i (a) collector current i (a) 1 -0.03 -0.01 100 10 -0.01 -0.03 -0.3 -0.1 c f - i -0.1 -0.3 c ce(sat) 0.01 v - i base-emitter voltage v (v) collector current i (a) 0 0 c be i - v cbe -2 -4 -6 -8 -10 -12 -14 -16 -2 -4 -6 -8 -10 -12 common emitter tc=25 c i =-20ma b -300 -200 -140 -100 -80 -60 -40 -0.4 -0.8 -1.2 -1.6 -2.0 -2 -4 -6 -8 -10 -12 common emitter v =-5v ce tc=1 00 c tc=25 c tc=-25 c fe c -1 -3 -10 -20 3 10 30 50 100 300 500 1k common emitter v =-5v ce tc=100 c tc=25 c tc=-25 c ce(sat) c voltage v (v) -1 -3 -10 -20 0.03 0.05 0.1 0.3 0.5 1 3 common emitter i /i =10 c b tc=100 c tc=25 c tc=-25 c be(sat) c voltage v (v) -1 -3 -10 -20 -0.1 -0.3 -1 -3 -10 common emitter i /i =10 c b tc=-25 c tc=25 c tc=100 c tc -1 -3 -10 3 30 5 50 t transition frequency f (mhz) common emitter v =-5v tc=25 c ce
2004. 11. 26 3/3 KTA1962A revision no : 0 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta transient thermal resistance th 1 0.1 0.01 0.001 pulse width t (s) w r - t p (w) 40 80 120 160 200 40 80 120 160 th w r ( c/w) curves should be applied in thermal limited area. (single nonrepetitive pulse) infinite heat sink no heat sink 1 2 10 100 1 k 0.01 0.1 1 10 50 1 2 tc=ta infinite heat sink safe operating area ce collector-emitter voltage v (v) -2 -5 -10 -30 -50 c -0.03 -0.05 -0.1 collector current i (a) -5 -50 -100 -300 -0.3 -0.5 -1 -3 -10 -30 * single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c c i max (continuous) dc operatio n v max ceo 10ms* 10m s* 100 ms * tc=25 c
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